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PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)

EURAXESS hosting organisation · عدة بلدان أوروبية

Building a quantum computer that can solve real-world problems will require the integration of many highly coherent qubits. Hole-spin qubits in planar germanium quantum wells are among the most promising candidates for this goal, combining fast electrical control, compact device geometry, and excellent performance in a semiconductor platform. As this technology advances, one of the main remaining challenges is readout: the quantum state of each qubit must be converted into a small electrical signal and detected quickly and reliably. At present, this still depends strongly on external wiring and amplification hardware, which becomes increasingly difficult to scale as the number of qubits grows. This PhD project aims to explore strained Ge/SiGe quantum-well transistors as integrated cryogeni

At a glance
Where
Multiple European countries
Deadline
2026-09-25
Funding
Funding described on programme page
Board
EURAXESS

Who can apply

Criteria stated by the funder on the official source.

Nationality
EURAXESS vacancies rarely print a nationality table. Confirm whether applicants from Tunisia can apply and whether a residence/work permit pathway exists on the employer page.
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Education
Research Field Physics Years of Research Experience 1 - 4 Research Field Physics Years of Research Experience 1 - 4 Research Field Physics Years of Research Experience 1 - 4 Research Field Physics Years of Research Experience 1 - 4
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Funding and what it does not cover

Funding details were taken from the official programme page text. Confirm the current call before applying.